PART |
Description |
Maker |
KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
GS-F8MB-SIMM 4962 |
8MByte SIMM Flash Memory Module(8M字节SIMM闪速存储器模块) 8MByte上海药物研究所闪存模块(上海药物研究所800万字节闪速存储器模块 8M X 8 FLASH 5V PROM MODULE, 70 ns, SMA80 SIMM-80 From old datasheet system 8 MByte SIMM FLASH MEMORY MODULE
|
Numonyx Asia Pacific Pte, Ltd. STMicroelectronics N.V. ST Microelectronics 意法半导
|
890-000-K0200-6000-00 901-000-00200-6000-00 801-00 |
MODUL ANZEIGE 18X24MM T5.5 MODUL SCHALTER 1P T1 3/4 MODUL SCHALTER 1P T5.5 MODUL ANZEIGE 18X18MM T5.5 MODUL ANZEIGE 18X24MM T1 3/4 1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, T/R MODUL ANZEIGE 18X18MM T1 3/4 MODUL SCHALTER 18X18MM SPDT T5.5 MODUL SCHALTER 18X18MM DPDT T1 3/4 模件SCHALTER 18X18MM双刀双掷T1 3 / 4 MODUL SCHALTER 18X18MM SPDT T1 3/4 模件SCHALTER 18X18MM单刀双掷T1 3 / 4
|
EAO International TE Connectivity, Ltd.
|
KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5328004CSWG KMM5328004CSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|