| PART |
Description |
Maker |
| SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| MURS120T3 MURS120T3G MURS140T3 MURS140T3G MURS110T |
1A 400V Ultrafast Rectifier
1A 50V Ultrafast Rectifier
1A 100V Ultrafast Rectifier
1A 150V Ultrafast Rectifier
Surface Mount Ultrafast Power Rectifiers 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
Surface Mount Ultrafast Power Rectifiers 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
|
ONSEMI[ON Semiconductor]
DOMINANT Opto Technologies Sdn. Bhd.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
| SHD626031 SHD626031P SHD626031D SHD626031N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| SDT12S6008 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
|
| SHD625051 SHD625051P SHD625051D SHD625051N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| C3M0280090D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GA50JT17-247 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| SHD626150 SHD626150D SHD626150N SHD626150P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
|
