| PART |
Description |
Maker |
| NNCD6.8RH NNCD6.8RH-T1 NNCD6.8RH-T2 |
ESD noise clipping diode 5pin SC-88A low capacitance
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE) 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电噪声裁剪二极管（四开型：共阳极）5引脚超小微型模具
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| HBAT-5400 HBAT-5400-BLK HBAT-5402 HBAT-5402-BLK HB |
High Performance Schottky Diode for Transient Suppression
HBAT-5402 · Clipping/clamping diode
HBAT-5400 · Clipping/clamping diode
HBAT-540C · Clipping/clamping diode
HBAT-540B · Clipping/clamping diode
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B NNCD3.3B |
静电放电噪声裁剪二极00毫瓦
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 MW TYPE
|
NEC[NEC]
NEC Corp.
|
| NNCD5.1C NNCD5.6C NNCD6.2C NNCD6.8C NNCD4.3C NNCD4 |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE 静电放电二极管噪声裁剪式150毫瓦
|
http://
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| CPDER12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDF24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDF3V3UP-HF |
Halogen Free ESD Diodes, V-C=5.5V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| TAR5S16 TAR5S19 TAR5S24 |
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Corporation
|
| W49V002T W49V002P |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Winbond Electronics Corp
|
| SSM6N29TU |
High-Speed Switching Applications
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM6P25TU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
