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K4E641612B-L - 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

K4E641612B-L_396857.PDF Datasheet

Part No.

K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-TL45 K4E661612B-TL45 K4E641612B-TL50 K4E661612B-TL50

Description

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

File Size

883.49K / 36 Page

Maker

Samsung Electronic
SAMSUNG[Samsung semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4E641612C-GL60

Maker: N/A

Pack: N/A

Stock: 6006

Unit price for :

50: $6.65

100: $6.31

1000: $5.98

Email: oulindz@gmail.com

Contact us

Homepage

http://www.samsung.com/Products/Semiconductor/

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Full text search : 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

Product Description search : 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

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