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IXBH16N170A - Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor

IXBH16N170A_396556.PDF Datasheet

 
Part No. IXBH16N170A IXBT16N170A
Description Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor

File Size 50.78K  /  2 Page  

Maker


IXYS[IXYS Corporation]



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: IXBH16N170A
Maker: IXYS
Pack: TO-247
Stock: Reserved
Unit price for :
    50: $16.34
  100: $15.52
1000: $14.70

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 Product Description search : Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor


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