| PART |
Description |
Maker |
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| GS82032AT-166 GS82032AT-166I GS82032AT-133 GS82032 |
ER 4C 4#16 SKT RECP WALL
64K x 32 / 2M Synchronous Burst SRAM
ER 5C 5#16 PIN RECP WALL
ER 5C 5#16 SKT RECP WALL
AM29BL400B/800B
64K x 32 2M Synchronous Burst SRAM
PROGRAMMER, UNIVERSAL;
|
GSI Technology
Electronic Theatre Controls, Inc.
|
| GVT7164B18 7164B18S |
64K X 18 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| GVT7164B36 7164B36S |
64K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| GS82032AT-133 GS82032AT-133I GS82032AT-166 GS82032 |
64K x 32 2M Synchronous Burst SRAM
From old datasheet system
|
GSI[GSI Technology]
ETC
|
| AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI |
3V 64K x 8/512K x 32 pipeline burst synchronous SRAM, 133MHz
|
Alliance Semiconductor
|
| IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632 |
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect
|
IDT[Integrated Device Technology]
|
| K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999)
|
Samsung Electronic
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
|
Micron Technology, Inc.
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
