| PART |
Description |
Maker |
| IKW75N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
|
Infineon
|
| SIDC14D60F6 SIDC14D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| IGB30N60H3 |
600V high speed switching series third generation
|
Infineon Technologies AG
|
| RJK6032DPH-E0 RJK6032DPH-E0T2 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| CM200DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
