| PART |
Description |
Maker |
| 2SA1742 2SA1742K 2SA1742-K |
7 A, 60 V, PNP, Si, POWER TRANSISTOR
Silicon powor transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC]
|
| 2SC3938 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1806 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC3739 2SC3739-T2B 2SC3739-L |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
http://
NEC
|
| 2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| 2SC3360 2SC3360-L 2SC3360-T2B 2SC3360-T1B |
Silicon transistor
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC
|
| 2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
| 2SC4553 |
Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC[NEC]
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
