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MRF6P21190HR6 - RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管,N沟道增强型MOSFET的侧

MRF6P21190HR6_381919.PDF Datasheet

 
Part No. MRF6P21190HR6
Description RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管,N沟道增强型MOSFET的侧

File Size 394.76K  /  12 Page  

Maker


Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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Part: MRF6P21190H
Maker: MOTOROLA
Pack: 高频管
Stock: 54
Unit price for :
    50: $55.38
  100: $52.62
1000: $49.85

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 Full text search : RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管,N沟道增强型MOSFET的侧
 Product Description search : RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管,N沟道增强型MOSFET的侧


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