| PART |
Description |
Maker |
| WS57C256F-1 WS57C256F-55 WS57C256F-55CMB WS57C256F |
WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AT28HC256-12DM_883 AT28HC256-12FM_883 AT28HC256-12 |
From old datasheet system
256 (32K x 8) High Speed CMOS
256 32K X 8 HIGH SPEED PARALLEL EEPROMS
256 32K x 8 High Speed CMOS E2PROM
|
ATMEL[ATMEL Corporation]
|
| ATV2500BQL-30KM/883 ATV2500BBQBQL |
High-speed High-density UV-erasable Programmable Logic Device(高速高密度紫外线可擦除PLD)
ATV2500B(BQ)(BQL) [Updated 5/00. 21 Pages] 2500 gate high-speed CPLD. standard & low power. 40 & 44 pins offered in Military Temp Grade only.
|
聚兴科技股份有限公司
Atmel Corp.
|
| IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V
32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
Ecliptek, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| AS7C513B AS7C513B-20TI AS7C513B-10JC AS7C513B-10JI |
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-PDIP -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
5V 32K x 16 CMOS SRAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Dual 2-to-4 Line Decoders/Demultiplexers 16-PDIP -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| V61C518256-15R |
32K X 8 HIGH SPEED STATIC RAM
|
Mosel Vitelic, Corp.
|
| P3C125620JC P3C125620JI P3C125620TC P3C125620TI P3 |
HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| IS61C3216AL-12K IS61C3216AL-12KI IS61C3216AL-12KLI |
32K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| T14M256A04 |
32K X 8 HIGH SPEED CMOS STATIC RAM
|
Taiwan Memory Technology
|
| IS61C256AL IS61C256AL-10J IS61C256AL-10JL IS61C256 |
32K X 8 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| LY61L256E LY61L256I LY61L256JL LY61L256JV LY61L256 |
32K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
