PART |
Description |
Maker |
M28W320BT100N1T M28W320BT100N6T M28W320BT100ZB1T M |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
M29W160EB |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29W320DB70N6AT M29W320DB70N6E M29W320DB70ZA6 M29W |
32 MBIT (4MB X8 OR 2MB X16 BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29W320DB70ZE1 M29W320DT M29W320DB |
32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory 32 MBIT (4MB X8 OR 2MB X16 BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
M29DW323DT70N6 M29DW323DT70N6E M29DW323DT70ZA6E M2 |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 8:24, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导 STMicroelectronics
|
M36W432-ZAT M36W432BZA M36W432T85ZA1T M36W432T85ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
|
M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双24分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽,双4分,启动V电源快闪记忆 Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V. 意法半导 ST Microelectronics SGS Thomson Microelectronics
|
M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8,启动座单电源闪 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8,启动座单电源闪 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8,启动座单电源闪
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ST Microelectronics 意法半导 STMicroelectronics N.V.
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M28W320BB 7584 M28W320BB100N6T M28W320BB100ZB1T M2 |
Quadruple ESD transient voltage suppressor - Cd max.: 240 pF; IRM max: 2A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 5.6 V; VRWM: 3 V Quadruple ESD transient voltage suppressor - Cd max.: 48 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V CLAMP 32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory From old datasheet system 32 MBIT (2MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
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意法半导 STMicroelectronics
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