| PART |
Description |
Maker |
| AH101 AH101-PCB |
JT 41C 41#20 SKT RECP 中功率，高线性放大器
Circular Connector; No. of Contacts:79; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
Medium Power/ High Linearity Amplifier
Medium Power, High Linearity Amplifier
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
WJ Communications
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| SST11CP15 |
4.9-5.8 GHz High-Linearity Power Amplifier
|
Silicon Storage Technology, Inc
|
| TGA4530 |
K Band High Linearity Power Amplifier
|
TriQuint Semiconductor
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MGA-43528-BLKG |
High Linearity 1.93 ?1.995 GHz Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
