PART |
Description |
Maker |
GM71C4400ELJ-80 GM71C4400E-80 GM71C4400E-60 GM71C4 |
Replaced by TPS79630,REG104-A : Single Output LDO, 1.0A, Fixed(3.0V), Low Noise, Fast Transient Response 5-DDPAK/TO-263 Single Output LDO, 1.0A, Fixed(3.3V), Low Noise, Fast Transient Response 5-DDPAK/TO-263 1,048,576字×位组织 1,048,576 Words x Bit Organization 1,048,576字×位组织
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LG Corp. LG, Corp.
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GM71C4403E-80 GM71C4403ELJ-80 GM71C4403E-60 GM71C4 |
MC 41C 27#20 14#16 PIN PLUG MB 41C 27#20 14#16 SKT PLUG Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85 MB 41C 27#20 14#16 PIN PLUG 1,048,576字×位组织 1,048,576 Words x Bit Organization 1,048,576字×位组织
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LG Corp. LG, Corp.
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ADR292 ADR290FR ADR292FR ADR290ER-RELL ADR290FR-RE |
18V; low noise micropower precision voltage reference. For portable instrumentation, precision reference for 3 or 5V systems Precision, Micropower 2.5 V XFET(TM) Reference Precision, Micropower 4.096V XFET Reference Precision, Micropower 2.048 V XFET Reference Low Noise Micropower
2.048 V, 2.5 V, and 4.096 V
Precision Voltage References Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.096 V, PDSO8 Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8 Low Noise Micropower Precision Voltage References 低噪声微精密电压基准 Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO8
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AD[Analog Devices] Analog Devices, Inc.
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GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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LG Semiconductor
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ADR391 ADR395 ADR390 ADR392 ADR391ART-RL ADR392ART |
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO5 Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO5 Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.096 V, PDSO5 Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO5 ER 3C 3#16S SKT PLUG CONNECTOR ACCESSORY
|
Analog Devices, Inc. ANALOG DEVICES INC
|
ISL21007CFB812Z ISL21007BFB820Z ISL21007CFB830Z IS |
Precision, Low Noise FGAVoltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO8 5-Channel Integrated LCD Supply 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO8 5-Channel Integrated LCD Supply 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO8 Precision, Low Noise FGA Voltage References Precision, Low Noise FGA?Voltage References
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Intersil, Corp. Intersil Corporation
|
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
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IDT7290820 IDT7290820PQF IDT7290820PF IDT7290820BC |
2K x 2K TSI, 16 I/O at 2/4/8Mbps, 5.0V TSI-TDM Switches TIME SLOT INTERCHANGE DIGITAL SWITCH 2,048 x 2,048
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IDT[Integrated Device Technology]
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NCP2860 NCP2860DM277R2 |
300 mA Very Low Noise LDO 300 mA Very Low Noise, Low Dropout Linear Regulator From old datasheet system
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ONSEMI[ON Semiconductor]
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