PART |
Description |
Maker |
UCQ5818 UCQ5818AF UCQ5818EPF 5818-F |
BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 C TO 85 C OPERATION BiMOS II 32位串行输入,锁存40℃驱动程序要运行85
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Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
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UCN5832 UCN5832A UCN5832EP UCQ5832EPNBSP 5832 UCQ5 |
BiMOS II 32-Bit Serial-Input, Latched Driver(用于驱动高分辨率打印磁头(要求安装空间小及高速工作)的BiMOS II 32位串行输入锁存驱动器) BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS From old datasheet system
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Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
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UCN5818AF UCN5818EPF UCN5818F 5818-F |
BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS BiMOS II 32位串行输入,锁存消息来源现役F1车手- DMOS的上下拉伸机 Bimos ii 32-Bit Serial-input, Latched Source Driver With Active-dmos Pull-down BiMOS II 32-BIT SERIAL-INPUT / LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
TSC251G1DXXX-L12CB TSC251G1DXXX-L12CED TSC251G1DXX |
FPGA, CYCLONE III, 5K LE, 164MQFP Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:106; IC CYCLONE III FPGA 5K 256-UBGA IC CYCLONE III FPGA 55K 484 UBGA IC CYCLONE III FPGA 55K 780 FBGA IC CYCLONE III FPGA 55K 780FBGA 8-BIT MICROCONTROLLER 8位微控制
|
Cypress Semiconductor Corp. Electronic Theatre Controls, Inc.
|
UCN5833A UCN5833EP 5833 UCN5833 |
BiMOS II 32-Bit Serial-Input, Latched Driver(为热打印机提供高速工作的BiMOS II 32位串行输入锁存驱动器) BiMOS II 32-BIT SERIAL-INPUT LATCHED DRIVER
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
UCN5832EP A5832 UCN5832A |
BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
IDT72V15160 IDT72V19160 IDT72V19320 IDT72V16320 ID |
3.3V MULTIMEDIA FIFO 16 BIT V-III 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY 3.3V MULTIMEDIA FIFO 16 BIT V-III, 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY
|
IDT[Integrated Device Technology]
|
UCQ5810 |
BiMOS II 10-Bit Serial-Input, Latched Source Drivers with Active-DMOS Pull-Downs
|
Allegro MicroSystems
|
CY7C60323-LTXC CY7C60323-PVXC CY7C60323-LTXCT CY7C |
enCoRe III Low Voltage Wireless presenter tools enCoRe?/a> III Low Voltage Wireless presenter tools enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B MULTIFUNCTION PERIPHERAL, QCC32 enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125 4-Bit Magnitude Comparator 16-CDIP -55 to 125 High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
UCQ5821LW UCQ5821A UCN5821LW 5821 UCN5821A |
BiMOS II 8-BIT SERIAL-INPUT, LATCHED DRIVERS
|
ALLEGRO[Allegro MicroSystems]
|