| PART |
Description |
Maker |
| KTX401U |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC752GTM 2SC752TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| KTX301U |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| 2SC5714 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| UPA831 UPA831TC UPA831TC-T1 UPA831TC-A |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC[NEC]
NEC Corp.
|
| KDS160 |
SILICON EPITAXIAL PLANAR TYPE DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC(Korea Electronics)
|
| UPA814 UPA814TC UPA814TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
|
| UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp.
NEC[NEC]
|
| 1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
| 1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
