| PART |
Description |
Maker |
| LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH40912 Q62702P1002 Q62702P0860 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| SFH415 SFH415-U SFH416-R |
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
Siemens Semiconductor G...
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TLP181-GB TLP181_02 TLP181 TLP181GR TLP181GRL |
Photocoupler GaAs Ired & Photo .Transistor
GaAs Ired and Photo−Transistor
GaAs IRED & PHOTO-TRANSISTOR
Photo coupler (phototransitor output)
IC OPTOCOUPL AC/DC-IN 1-CH TRANS DC-OUT 4MFSOP
|
TOSHIBA[Toshiba Semiconductor]
|
