PART |
Description |
Maker |
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
IRF120 |
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
|
Intersil Corporation
|
RFP6P10 RFP6P08 |
-6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETs -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
CDSUR4448-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
CDSV6-4448SD-G CDSV6-4448AD-G CDSV6-4448TI-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=100mA
|
Comchip Technology
|
CDSV3-217-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
113CNQ100ASM 113CNQ100A 113CNQ100ASL 113CNQ080A 11 |
SCHOTTKY RECTIFIER 肖特基整流器 80V 110A Schottky Common Cathode Diode in a D61-8 package 80V 110A Schottky Common Cathode Diode in a D61-8-SL package 80V 110A Schottky Common Cathode Diode in a D61-8-SM package 100V 110A Schottky Common Cathode Diode in a D61-8-SL package 100V 110A Schottky Common Cathode Diode in a D61-8-SM package
|
International Rectifier, Corp. IRF[International Rectifier]
|
2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB POWER TRANSISTORS(4A/80V/30W) POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
CDBHM1100L-G CDBHM120L-G CDBHM140L-G CDBHM160L-G C |
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=1A Bridge Rectifiers, V-RRM=20V, V-DC=20V, I-(AV)=1A Bridge Rectifiers, V-RRM=40V, V-DC=40V, I-(AV)=1A Bridge Rectifiers, V-RRM=60V, V-DC=60V, I-(AV)=1A Bridge Rectifiers, V-RRM=80V, V-DC=80V, I-(AV)=1A
|
Comchip Technology
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
CDSV3-202N-G CDSV3-202P-G CDSV3-202N-G12 |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA Small Signal Switching Diodes
|
Comchip Technology
|