PART |
Description |
Maker |
GA125TS120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
|
IRF[International Rectifier]
|
IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A) 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
IRG4BH20K-S |
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGP20B120U-E |
1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRGPS60B120KD 2023 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
GA100TS60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
|
International Rectifier
|
IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT INSULATED GATE BIPOLAR TRANSISTOR 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRG4PSH71UD |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA INSULATED GATE BIPOLAR TRANSISTOR WITH 1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
RURD4120S RURD4120 FN3641 |
4A/ 1200V Ultrafast Diodes 4A, 1200V Ultrafast Diodes From old datasheet system
|
Intersil Corporation
|