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GA250TD120U - 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT HALF-BRIDGE IGBT DOUBLE INT-A-PAK

GA250TD120U_366353.PDF Datasheet


 Full text search : 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT HALF-BRIDGE IGBT DOUBLE INT-A-PAK


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From old datasheet system
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1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
IRF[International Rectifier]
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
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IRF[International Rectifier]
IRG4PSH71UD 99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
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IRG4PH50U 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
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RURD4120S RURD4120 FN3641 4A/ 1200V Ultrafast Diodes
4A, 1200V Ultrafast Diodes
From old datasheet system
Intersil Corporation
 
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