PART |
Description |
Maker |
AN8001FHK |
Gradation voltage generation IC for liquid crystal display
|
PANASONIC[Panasonic Semiconductor]
|
SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片 LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP 5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP 5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP 5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
APT60GT60JR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
APT30GT60BRG APT30GT60BR08 |
Low Forward Voltage Drop The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Microsemi Corporation Advanced Power Technology
|
APT20GT60CR |
Thunderbolt IGBT 600V 25A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
SI3201-FS SI3230-X-GM SI3230M-X-GM SI3230M-X-FM SI |
PROSLIC PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION PROSLIC庐 PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories Inc.
|
OP77AZ OP77EZ OP77BZ OP77FJ OP77FP OP77FZ OP77GS O |
NEXT GENERATION OP07 / ULTRALOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER Next Generation OP07, Ultralow Offset Voltage Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 25 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, MBCY8 OP-AMP, 100 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, CDIP8
|
AD[Analog Devices] Analog Devices, Inc. ANALOG DEVICES INC
|
FCH47N60 FCH47N6006 FCA47N60 FCA47N60_F109 FCA47N6 |
new generation of high voltage MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
OP77AJ_883C OP77AZ_883C OP77BRC_883C 5962-8773802G |
Next Generation OP07 Ultralow Offset Voltage Operational Amplifier
|
Analog Devices
|