| PART |
Description |
Maker |
| SC0365.SERIES 2598 |
SCHOTTKY DIE 036 x 036 mils
From old datasheet system
|
International Rectifier
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| HUF75321D3ST |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor
|
| HUF75321D3 HUF75321D3S 75321D |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| AT24C512-W2.7-11 |
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
|
ATMEL CORP
|
| PE1002-2 |
Field Replacable Tab Contact 0.036 Contact Diameter And .005 x .020 Tab
|
Pasternack Enterprises, Inc.
|
| APT20M36BLL APT20M36SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology
|
| PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE)
x32 EPROM Module
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE)
8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块
8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
|
NXP Semiconductors N.V.
Amphenol, Corp.
|
| SB063P200-W-AG SB063P200-W-AG_AL SB063P200-W-AG/AL |
Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp
|
TRANSYS Electronics Lim...
TRANSYS Electronics Limited
|
| SB065C025-3-W-AG |
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
|
TRANSYS Electronics Limited
|
| SB039C040-0.5-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF.
|
TRANSYS Electronics Limited
|
