| PART |
Description |
Maker |
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMGD400UN |
Dual N-channel uTrenchMOS ultra low level FET
|
Philips Semiconductors
|
| STP40N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| PMWD26UN |
Dual N-channel uTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| PMWD26UN-01 PMWD26UN |
Dual uTrenchMOS(TM) ultra low level FET
100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
From old datasheet system
|
Philips
|
| GFC244 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
