| PART |
Description |
Maker |
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| BCP48 BCP28 |
PNP Silicon Darlington Transistors 进步党硅达林顿晶体管
Darlington Transistors - PNP Silicon Darlington Transistor for general AF applications
|
INFINEON[Infineon Technologies AG]
|
| CMPTA64 CMPTA13 CMPTA14 CMPTA63 |
SMD Small Signal Transistor PNP Darlington
complementary silicon darlington transistors
|
Central Semiconductor Corp
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| 2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁|甲一（c）|52
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
| 2SB1214TP 2SB1214TP-FA 2SB1214 |
PNP Epitaxial Planar Silicon Transistor
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 3A I(C) | TO-251VAR
|
SANYO
|
| KSH117TF KSH117ITU |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
| BDX34 BDX34B BDX34C BDX34A |
Transistor de puissance PNP darlington
PNP SILICON POWER DARLINGTONS
|
Power Innovations Ltd
|
| BDX34 BDX34D BDX34A BDX34B BDX34C |
PNP SILICON POWER DARLINGTONS
EMITTER IR 850NM T1 3/4
Transistor de puissance PNP darlington
|
Power Innovations International, Inc.
Power Innovations Limited
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
