| PART |
Description |
Maker |
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MSM27C3202CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit One Time PROM
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM 2097152字16位或4194304字8位一次性可编程
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| UPD23C64040JLGX-XXX UPD23C64080JLGY-XXX-MKH |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）页面访问模式
|
http://
NEC, Corp.
NEC Corp.
|
| MS81V26000 MS81V26000-12TB FEDS81V26000-01 |
1,114,112-Word X 24-Bit Field Memory
|
OKI[OKI electronic componets]
|
| MSM51V4223C MSM51V4223C-30RA MSM51V4223C-40RA |
262,263-Word × 4-Bit Field Memory
262,263-Word 】 4-Bit Field Memory
|
OKI electronic componets
|
| MSM51V4222C-40RA MSM51V4222C-40RD MSM51V4222C MSM5 |
262,263-Word × 4-Bit Field Memory
262,263-Word 】 4-Bit Field Memory
|
OKI electronic componets
|
| MSM51V4221C MSM51V4221C-30JA MSM51V4221C-30RA MSM5 |
262,263-Word × 4-Bit Field Memory
262,263-Word 】 4-Bit Field Memory
|
OKI electronic componets
|
| MSM51V4221C-40RD MSM51V4221C-30RD MSM51V4221C-30JA |
262,263-Word 4-Bit Field Memory 262263词位场记忆
|
OKI SEMICONDUCTOR CO., LTD.
|
| FEDS81V26000-01 |
1,114,112-Word X 24-Bit Field Memory 1114112字24位场记忆
|
OKI SEMICONDUCTOR CO., LTD.
|
