PART |
Description |
Maker |
UPA801TF UPA801TF-T1 |
BJT NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
2SC5378 2SC5378R |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2SC2229Y BF594 2SC1815GR 2SC1815O BF596 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 50mA的一c)|2 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五(巴西)总裁| 25mA电流一(c)|2
|
Lumex, Inc. Atmel, Corp.
|
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
2SB1118 2SD1618 2SD1616AK 2SD1616U |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage High-Current Amplifier, Muting Applications
|
Sanyo
|
2SC829 2SC829B 2SC829C |
Silicon NPN epitaxial planer type(For high-frequency amplification) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
|
http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
|
2N2894 2N2818 2N2823 2N2892 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset PNP SILICON TRANSISTOR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | STR-5/16
|
SEME-LAB[Seme LAB]
|
2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors High Current Switching Applications PNP Epitaxial Planar Silicon Transistors High Current Switching Applications 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
SANYO[Sanyo Semicon Device] SANYO SEMICONDUCTOR CO LTD Sanyo Electric Co.,Ltd.
|
2SD669AC 2SD669D 2SD669AB 2SD669 2SD669A |
Silicon NPN Transistor TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
|
Hitachi Semiconductor Maxim Integrated Products, Inc.
|