| PART |
Description |
Maker |
| MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
| TIP111 TIP110 TIP117 TIP112 TIP115 TIP116 ON2978 |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Plastic Medium-Power Complementary Silicon Transistors
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| 2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015
Complementary SlllconPower Translstors
From old datasheet system
|
ON Semiconductor
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJ2500 MJ3000 MJ1250 MJ3001 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BD778 BD776 BD777 |
Plastic Darlington Complementary Silicon Power Transistors
DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS
|
Motorola Inc
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2N5883G 2N5884 2N5884G 2N5885G 2N5886G 2N5883 2N58 |
Complementary Silicon High−Power Transistors 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
Complementary Silicon High−Power Transistors
|
Rectron Semiconductor
ONSEMI[ON Semiconductor]
|
| 2M5991 2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS 12安培功率晶体管互补性的芯片40,60,8000
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40/60/80 VOLTS 100 WATTS
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40 /60 /80 VOLTS 100 WATTS
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 406080 VOLTS 100 WATTS
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N6473 2N6474 2N6476 2N6475 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON SWITCHING TRANSITORS 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
