PART |
Description |
Maker |
CY7C09089 CY7C09079A CY7C09099 CY7C91089 CY7C91099 |
64K x 8 Synchronous Dual-Port Static RAM(64K x 8 同步双端口静态RAM) From old datasheet system 32K/64K/128K x 8/9Synchronous Dual-Port Static RAM
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Cypress Semiconductor Corp.
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MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM ER 3C 3#12 PIN PLUG RoHS Compliant: No 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
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CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压(3.3V 64K的18同步高速缓冲存储器的RAM From old datasheet system 64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
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IS62C6416A IS61C6416AL IS64C6416AL IS64C6416AL-15K |
64K x 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc Integrated Silicon Solution...
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KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
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IDT70V3389S6PRFI IDT70V3389S IDT70V3389S4BC IDT70V |
From old datasheet system HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA256 HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PQFP128 HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system Dual N-Channel Digital FET 30V N-Channel PowerTrench MOSFET HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双,端口静态RAM.5V的接 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
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KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作)4K的16位高速的CMOS静态随机存储器.3V的工作)
|
Samsung Semiconductor Co., Ltd.
|
K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
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