| PART |
Description |
Maker |
| MR27V3266D |
2M x16 / 1M x32 Synchronous OTP ROM
|
OKI[OKI electronic componets]
|
| AT49LD3200-20TC AT49LD3200-13TI AT49LD3200-10TI AT |
x16/x32 Flash EEPROM x16/x32闪存EEPROM
|
Atmel, Corp.
Electronic Theatre Controls, Inc.
|
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
| K7A403600B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A403609B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| GS81132Q4I GS81132Q6I |
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Altera, Corp.
|
| UPD4382361GF-A85 UPD4382321GF-A85 UPD4382361GF-A90 |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Samsung Semiconductor Co., Ltd.
|
| K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
64Mb H-die (x32) SDRAM Specification 64芯片（X32号）内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
TRIMMER, 15 TURN 20K
CONN HEADER 12POS DL PCB 30GOLD
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HY6716110C-25 HY6716110C-15 |
x16 Fast Synchronous SRAM
|
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
