PART |
Description |
Maker |
LX5202 LX5202CDWP |
18-LINE, μ POWER SCSI TERMINATOR 18-LINE, レ POWER SCSI TERMINATOR 18-LINE, POWER SCSI TERMINATOR 18-LINE/ POWER SCSI TERMINATOR CONN TERM BLOCK 10POS 5.08MM R/A 18-LINE 110 ohm SCSI BUS TERMINATOR, PDSO28
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp. Advanced Power Technology
|
Q67006-A5150 Q67000-A5150 TUA2019-5X TUA2019-5XGEG |
VHF I/VHF II/UHF-Tuner IC VHF I / VHF II / UHF-Tuner IC 甚高频的I /甚高频二/超高频调谐器IC
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE From old datasheet system VHF variable capacitance diode(VHF 可变电容二极 HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
|
NXP Semiconductors Philips Semiconductors Philipss Quanzhou Jinmei Electro...
|
TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BBY42 BBY42_1 |
From old datasheet system VHF variable capacitance diode(VHF 可变电容二极
|
NXP Semiconductors Philips Semiconductors Philipss
|
HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation Toshiba Semiconductor
|
2SC4182 |
UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC[NEC]
|
2SK2975 SK2975 |
From old datasheet system RF POWER MOS FET(VHF/UHF power amplifiers)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|