| PART |
Description |
Maker |
| MA45334 |
SILICON ABRUPT TUNING VARACTOR DIODE S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
Advanced Semiconductor, Inc.
|
| AT12020-21 AT1202021 |
SILICON ABRUPT VARACTOR DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
|
| MA45851 |
SILICON ABRUPT TUNING VARACTOR DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
|
| MA45400 MA45436-287T MA45436CK-287T MA45437-287T M |
Si Abrupt Tuning Varactor Diode
|
MACOM[Tyco Electronics]
|
| MAVR-045436-0287AT MAVR-045436-0287FT MA45436-287T |
Si Abrupt Tuning Varactor Diode
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| Q62702-B127 BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) 硅调谐变容二极管（突变结调谐二极管调谐范25 V高品质因数）
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SMV1413-079 |
Abrupt Junction Tuning Varactors S BAND, 7.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| SVC388 |
Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| 1N5703 1N5700 1N5705 1N5699 1N5695 1N5696 1N5701 1 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES 一般用途突变的变容二极
|
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
TE Connectivity, Ltd.
|
| 1N5454 1N5472 1N5446 1N5470 1N5441 1N5449 1N5450 1 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES 一般用途突变的变容二极
|
Knox Semiconductor Inc
KNOX[Knox Semiconductor, Inc]
KNOX[Knox Semiconductor Inc]
|
|
