| PART |
Description |
Maker |
| KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| IC-TW2EVALTW22D IC-TW2QFN24 |
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
|
IC-Haus GmbH
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| AT52BR3224 |
32M bit single plane Flash combined with a 4M bit or 8M bit SRAM
From old datasheet system
|
Atmel Corp
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD23C32300GZ-XXX-MJH UPD23C32300F9-XXX-BC3 |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
