PART |
Description |
Maker |
FQD12P10 FQU12P10 FQD12P10TF FQD12P10TM |
100V P-Channel MOSFET 100V P-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQT7N10 FQT7N10TF |
100V N-Channel MOSFET 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET 100V N-Channel QFET
|
Fairchild Semiconductor, Corp.
|
FQT7N10L FQT7N10LTF FQT7N10LL99Z |
100V N-Channel Logic Level QFET 100V LOGIC N-Channel MOSFET 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
|
IRF5NJ540 |
Avalanche Energy Ratings POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
FQI7N10 FQB7N10 FQB7N10TM FQI7N10TU |
100V N-Channel MOSFET 100V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
FQB34P10TM FQB34P10TM-F085 |
100V P-Channel MOSFET -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
|
Fairchild Semiconductor
|
IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
IRF150 JANTXV2N6764 JANTX2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
|
IRF[International Rectifier]
|