| PART |
Description |
Maker |
| 2SC311207 2SC3112 2SC3112-B |
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| 2SC3325 E000829 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HN1B01FU HN1B01FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC732TM E001075 |
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Mitsubishi Electric Semiconductor
Toshiba Semiconductor
|
| 2SC5376F07 2SC5376F |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4116 E000906 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN2C01FU E001987 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4118 2SC411807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
