| PART |
Description |
Maker |
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HE8811 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| LNA4401L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| T8514VB-SF-F |
Specification of GaAlAs IR Emitting Diode Chip
|
http://
Vishay Siliconix
|
| LN189L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| TSAL5300 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| TSAL6200 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
