| PART |
Description |
Maker |
| IDT71128 IDT71128S12Y IDT71128S12YI IDT71128S15Y I |
Precision Adjustable (Programmable) Shunt Reference 8-SOIC -40 to 125
Precision Adjustable (Programmable) Shunt Reference 8-TSSOP -40 to 125
CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout
256K x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
| PDM31034SA10SO PDM31034SA10SOATY PDM31034SA10SOATR |
1 megabit 3.3V static RAM 128K x 8-bit revolutionary pinout
|
PARADIGM
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| GVT72028A4 72028A4S |
TRADITIONAL PINOUT 256K X 4
From old datasheet system
|
Galvantech
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| AS7C31025A-10TJI AS7C31025A-10JI AS7C31025A-10TJC |
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
Parallel-Load 8-Bit Shift Registers 16-TVSOP -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor, Corp.
|
