| PART |
Description |
Maker |
| AS5C512K8ECJ-35/H AS5C512K8ECJ-17L/H AS5C512K8ECJ- |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 12k × 8的SRAM高速SRAM和革命引脚排
LED, GRN SMT, 1206
µP-Compatible 14-Bit CMOS DAC; Package: PLCC; No of Pins: 20; Temperature Range: Commercial
Circular Connector; No. of Contacts:37; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Right Angle Plug; Insert Arrangement:28-21 RoHS Compliant: No
CAT5 STP BACKBONE CABLE STRAIGHT PIN, PLN-GRAY
512K x 8 SRAM - high speed with revolutionary pinout
|
Electronic Theatre Controls, Inc.
Austin Semiconductor
http://
|
| GVT72256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IS63LV1024-8KL IS63LV1024L-10HI IS63LV1024L-12B IS |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| AT17LV002A AT17LV010A AT17LV128A AT17LV256A AT17LV |
2M-bit Configuration EEPROM (5V and 3.3V), Altera Pinout.
1M-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
128K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
256K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
512K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
65K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
FPGA configuration EEPROM memory. Memory size 2-Mbit.
FPGA configuration EEPROM memory. Memory size 1-Mbit.
|
Atmel
|
| MAX8877 MAX8877C_DXY MAX8877EUKXY-T MAX8877-MAX887 |
Low-Noise, Low-Dropout, 150mA Linear Regulators with ?982 Pinout
Low-Noise, Low-Dropout, 150mA Linear Regulators with 2982 Pinout
From old datasheet system
Low-Noise, Low-Dropout, 150mA Linear Regulators with ‘2982 Pinout
Low-Noise / Low-Dropout / 150mA Linear Regulators with 2982 Pinout
AC Series Door Switch, Single Pole Double Throw Circuitry, 15 A at 250 Vac, Rod Actuator, Silver Contacts, Screw Termination
Low-Noise, Low-Dropout, 150mA Linear Regulators with 982 Pinout 低噪声，低压差，150mA的线性稳压器的\u0026#39;2982引脚
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
