PART |
Description |
Maker |
LV49157V |
Bi-CMOS LSI Class-D Audio Power Amplifier with built-in Headphone Ampifier BTL 15W × 2ch
|
Sanyo Semicon Device
|
2N5952 2N5952D74Z |
N-Channel RF Amplifier N-Channel RF Ampifier BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 8; FREQUENCY RANGE: 2 - 500 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM INSERTION
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|
TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
AWS5503 AWS5503S15 |
The AWS5503 is a Single Pole Double Throw (SPDT) GaAs MMIC assembled in a MSOP-8 plastic package. GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz
|
Anadigics Inc
|
RMPA2451 RMPA2451-TB |
2.42.5 GHz GaAs MMIC Power Amplifier 2.4-2.5 GHz GaAs MMIC Power Amplifier ISM Band PA (Partially Matched)
|
Fairchild Semiconductor Corporation
|
AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
HMC-APH196 |
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET 2W X / Ku-BAND POWER GaAs MESFET 2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp. NEC Corp. NEC[NEC]
|