| PART |
Description |
Maker |
| AL440B AL440B-12 AL440B-24 |
4M-bits FIFO field memory
4Mbits (512k x 8-bit) FIFO memory
4MBits FIFO Field Memory
|
ETC[ETC]
N.A.
AVERLOGIC
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| GS8161Z32D-166 GS8161Z32D-166I GS8161Z32D-166T GS8 |
512K X 36 ZBT SRAM, 6 ns, PBGA165
Dual Voltage Clamp 8-SM8 -40 to 85 35.7流水线和流量，通过同步唑的SRAM
10-Bit Voltage Clamp 24-SOIC -40 to 85 35.7流水线和流量，通过同步唑的SRAM
10-Bit Voltage Clamp 24-TVSOP -40 to 85 35.7流水线和流量，通过同步唑的SRAM
24-Bit to 48-Bit Registered Buffer with SSTL_2 Inputs and Outputs 114-BGA MICROSTAR 0 to 70 35.7流水线和流量，通过同步唑的SRAM
RECTIFIER SCHOTTKY SINGLE 1A 20V 30A-Ifsm 0.5Vf 0.5A-IR SMA 5K/REEL 35.7流水线和流量，通过同步唑的SRAM
512K X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量，通过同步唑的SRAM
GIGABASE 350 CAT5E PATCH 4 FT, SNAGLESS, PURPLE 35.7流水线和流量，通过同步唑的SRAM
22-Bit Voltage Clamp 48-TVSOP -40 to 85
Dual Voltage Clamp 8-US8 -40 to 85
GIGABASE 350 CAT5E PATCH 25 FT, SNAGLESS, PURPLE
8192 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70
1024 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
RECTIFIER SCHOTTKY SINGLE 1A 30V 25A-Ifsm 0.41Vf 1A-IR SMA 5K/REEL
CAT5E PATCH CORD PURPLE 5FT
Replaced by SN74TVC16222A : 22-Bit Voltage Clamp 48-TSSOP -40 to 85
2048 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 64-TSSOP 0 to 70
ENHANCED PATCH CORD PURPLE 3 FT
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70
14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TSSOP 0 to 70
26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 96-LFBGA 0 to 70
Enhanced Product 26-Bit Registered Buffer With Sstl_2 Inputs And Lvcmos Outputs 96-LFBGA -40 to 85
10-Bit Voltage Clamp 24-TSSOP -40 to 85
4096 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
10-Bit Voltage Clamp 24-SSOP/QSOP -40 to 85
22-Bit Voltage Clamp 48-SSOP -40 to 85
|
http://
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| HCC4011 HCC4011B HCC4011BC1 HCC4011BEY HCC4011BF H |
DUAL D . TYPE FLIP.FLOP
32768 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70
TVS UNIDIRECT 600W 18V SMB 与非
NAND GATES 与非
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IDT72V273L7BC IDT72V273L7BCI IDT72V273L7PF IDT72V2 |
64K x 18 / 128K x 9 SuperSync II FIFO, 3.3V
32K x 18 / 64K x 9 SuperSync II FIFO, 3.3V
16K x 18 / 32K x 9 SuperSync II FIFO, 3.3V
8K x 18 / 16K x 9 SuperSync II FIFO, 3.3V
4K x 18 / 8K x 9 SuperSync II FIFO, 3.3V
2K x 18 / 4K x 9 SuperSync II FIFO, 3.3V
1K x 18 / 2K x 9 SuperSync II FIFO, 3.3V
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO
|
IDT
Integrated Device Technology
|
| M66257FP M66257E M66257 |
5120 x 8-BIT x 2 LINE MEMORY (FIFO)
From old datasheet system
5120 8-BIT 2 LINE MEMORY (FIFO)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| MT5C1005F-20L_883C MT5C1005F-20L_IT MT5C1005F-20L_ |
256K x 4 SRAM SRAM MEMORY ARRAY 256K X 4 STANDARD SRAM, 25 ns, CDFP32
256K x 4 SRAM SRAM MEMORY ARRAY 256K X 4 STANDARD SRAM, 25 ns, CDSO32
256K x 4 SRAM SRAM MEMORY ARRAY 256K X 4 STANDARD SRAM, 20 ns, CDSO32
256K x 4 SRAM SRAM MEMORY ARRAY 256K X 4 STANDARD SRAM, 35 ns, CDIP28
256K x 4 SRAM SRAM MEMORY ARRAY 256K X 4 STANDARD SRAM, 35 ns, CDFP32
|
Austin Semiconductor, Inc
|
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
