PART |
Description |
Maker |
K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 |
; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM 512Mbit gDDR2 SDRAM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYB25D512160BE-6 HYB25D512800BE-5 HYB25D512160BC-5 |
512Mbit Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
HYB18H512321BF-08_10 HYB18H512321BF HYB18H512321BF |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG http://
|
HYB18H512321BF-08 HYB18H512321BF-10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
|
HYB18H512321AF-12 HYB18H512321AFL14 HYB18H512321AF |
512-Mbit GDDR3 Graphics RAM
|
Infineon
|
MD4331-DXX |
Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk
|
M-Systems
|
HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|