| PART |
Description |
Maker |
| DF2S6.8S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.8FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S5.6S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| CRS1106 CRS11 |
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| DF5A3.3F |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| 1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960 |
15V, 0.5W Zener Diode
33V, 0.5W Zener Diode
10V, 0.5W Zener Diode
12V, 0.5W Zener Diode
22V, 0.5W Zener Diode
18V, 0.5W Zener Diode
16V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
Half Watt Zeners
Zeners General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| DF3A5.6FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.6FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| TC74AC273P07 TC74AC273P TC74AC273F |
CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
|
Toshiba Semiconductor
Toshiba, Corp.
|
