PART |
Description |
Maker |
NJG1301 IE02001 |
Tranmitting GaAs Power Ampifier IC From old datasheet system
|
New Japan Radio
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器,QFN封装
|
Mimix Broadband, Inc.
|
AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
MASWSS0020 MASWSS0020SMB MASWSS0020TR |
DC-3 GHz, GaAs SP4T 2.5V high power switch GaAs SP4T 2.5V High Power Switch DC - 3 GHz ER 9C 6#16 3#12 SKT RECP ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
|
MA-Com MACOM[Tyco Electronics]
|