PART |
Description |
Maker |
IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
|
LOB1-R0523FI LOB1-R0221FI LOB1-R022JI LOB1-R00562F |
RESISTOR, 1 W, 1 %, 0.0523 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0221 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00562 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00604 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0147 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00523 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0232 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0332 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00576 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00649 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00698 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00511 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0422 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0237 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0133 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0226 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00665 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0357 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00549 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00634 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00619 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0475 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00681 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR 100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET UHF BAND, Si, RF SMALL SIGNAL, FET 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc. LEDtronics, Inc. Integrated Device Technology, Inc. Vishay Beyschlag Air Cost Control Mini-Circuits Moeller Electric, Corp. OSRAM GmbH Cooper Hand Tools KOA Speer Electronics,Inc. ProMOS Technologies, Inc.
|
MTD5P06V ON2511 MTD5P06V-T4 |
5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
5962-9314001HPA 5962-9314001HPC 5962-9314001HXA 59 |
5962-9314001HPA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HPC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HXA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HYA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HYC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HZA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler HSSR-7110 · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler HSSR-7111 · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler 5962-9314001HZC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler
|
Agilent (Hewlett-Packard)
|
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system 8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FS10VSJ-2 |
CONN, RCPT (F), SMB, 50 OHM, RTANG PC MTG, AU 10 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. Mitsubishi Electric Corporation
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
|