PART |
Description |
Maker |
ER1400 |
1400-Bit Serial Electrically Alterable ROM
|
General Semiconductor
|
X2816AM |
2048 x 8-Bit / Electrically EPROM ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM 128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM 8k隆驴8 bit electrically erasable PROM
|
Rohm
|
24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C compatible 2-wire serial ... The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r 32K I2C Serial EEPROM The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial ... 32KIC Serial EEPROM 32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
IS93C76A IS93C86A |
(IS93C76A / IS93C86A) 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
IS25C16 |
(IS25C08 / IS25C16) 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
BR24L64-W BR24L64-W1 |
8k?8 bit electrically erasable PROM 8k×8 bit electrically erasable PROM
|
Rohm
|
IDT54FCT162952CTEB IDT74FCT162952BTPV IDT73720 IDT |
CAP 6.8UF 20V 20% TANT SMD-6032-15 TR-7-PL SN/PB5% LOWESR-1400 FCT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56 16-BIT TRI-PORT BUS EXCHANGER
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
|
GHZTECH[GHz Technology]
|
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor 55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
|
GHZTECH[GHz Technology]
|