| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| JANSR2N7281 FN4294 |
Radiation Hardened/ N-Channel Power MOSFET
Radiation Hardened, N-Channel Power MOSFET
Radiation Hardened N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 5962D9567002VCA 5962D9567002VCC 5962D9567002VGA HS |
Low Power, High Performance Radiation Hardened Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, CDIP14
CAP 47UF 4V 25V TANT SMD-7343-43 TR-7 LOWESR-100
CONNECTOR ACCESSORY
Low Power/ High Performance Radiation Hardened Operational Amplifier
|
Intersil, Corp.
Intersil Corporation
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SM602HRR SM600HRR SM612 SM600 SM610 SM612R SM600R |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS SPECIALTY ANALOG CIRCUIT, MBCY4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
|
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRHNA7264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| IRHM7130 IRHM3130 IRHM8130 IRHM4130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| HS-1115RH FN4098 5962F9678501VPA HFA1115IP |
Buffer, Output Limiting, Closed-Loop, 225MHz, 1135V/s, Programmable Gain, Rad-Hard
From old datasheet system
Radiation Hardened, High Speed, Low Power Output Limiting, Closed-Loop-Buffer Amplifier
Radiation Hardened/ High Speed/ Low Power Output Limiting/ Closed-Loop-Buffer Amplifier
Radiation Hardened, High Speed, Low Power
Output Limiting, Closed-Loop-Buffer Amplifier(抗辐射高速、低功耗、输出限定的锁相环缓冲放大器)
|
INTERSIL[Intersil Corporation]
|
| IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP |
RADIATION HARDENED POWER MOSFET THRU-HOLE 抗辐射功率MOSFET的通孔
From old datasheet system
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
