| PART |
Description |
Maker |
| STUB527 STUB59B STUB010 STUB011 STUB012 STUB013 ST |
Working peak reverse voltage: 58.1 V, 1 mA, 400 W surface mount transient voltage suppressor
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor
Working peak reverse voltage: 64.1 V, 1 mA, 400 W surface mount transient voltage suppressor
|
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| IDT74FCT825BTSOB IDT74FCT825BTSO IDT74FCT825BTQB I |
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:60V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:50V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
CAP 0.82UF 50V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.1UF 50V 10% X7R SMD-1805 TR-7-PL SN-NIBAR
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS FCT SERIES, 9-BIT DRIVER, TRUE OUTPUT, CDFP24
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704 |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
|
NTE[NTE Electronics]
|
| P6KE18A P6KE22 P6KE36A P6KE6.8A P6KE7.5A P6KE160 P |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA.
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS 600瓦特峰值功率瞬态电压抑制器
Power Amplifier Driver 32-VQFN -40 to 85 600瓦特峰值功率瞬态电压抑制器
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 284.00 V. Test current IT = 1 mA.
|
Shanghai Sunrise Electronics
Bytes
|
| NTE5313 NTE5314 NTE5315 NTE5316 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 200V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 400V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 600V.
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 800V.
|
NTE Electronics
|
| 1SV216 |
Reverse Voltage VR 30 V Peak Reverse Voltage VRM 35 (RL = 10K ) V
|
TY Semiconductor Co., Ltd
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| SA110A SA11A SA13ARL SA43ARL SA33ARL SA24ARL SA14A |
500 Watt Peak Power MiniMOSORB™ Zener Transient Voltage Suppressors
500 Watt Peak PowerMiniMOSORB Zener Transient Voltage Suppressors
500 W Peak Power MiniMOSORB Zener Transient Voltage Suppressor Unidirectional
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
STANDOFF,M-F,1/4H,4-40X.25SS
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:3300pF; Capacitance Tolerance: 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.01uF; Capacitance Tolerance: 5%; Voltage Rating:25VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0805; Termination:SMD RoHS Compliant: Yes
|
On Semiconductor
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
