PART |
Description |
Maker |
APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
STB30NS15 |
N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
|
STMICROELECTRONICS[STMicroelectronics]
|
WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP 128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp. White Electronic Designs, Corp.
|
D2TO020CR0750JRE3 |
RESISTOR, METAL GLAZE/THICK FILM, 20 W, 5 %, 150 ppm, 0.075 ohm, SURFACE MOUNT TO-263, ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
SI9933ADYD84Z SI9933ADYL86Z SI9933ADYF011 |
3.4 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8
|
Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
|
FQU20N06LTU |
60V N-Channel Logic level QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
APT50M75B2FLL APT50M75LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 500V 57A 0.075 Ohm
|
Advanced Power Technology, Ltd. Advanced Power Technology Ltd.
|
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|