| PART |
Description |
Maker |
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NE57810 NE57810S |
Advanced DDR memory termination power with external reference in
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY
STANDOFF HEX 6-32THR 2.5L ALUM
TVS, 6.5CA, BI, 6.5V, 400W, SMT
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭
TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp.
Intel, Corp.
|
| 313072-002 6402 6400 |
Advanced Memory Buffer
|
Intel Corporation
|
| NCP51190-17 |
1.5A DDR Memory Termination Regulator
|
ON Semiconductor
|
| MP2007 |
DDR Memory Termination Regulator
|
MPS
|
| RC28F320C3TA100 GE28F800C3TA90 GT28F160C3BA110 GT2 |
Advanced Boot Block Flash Memory (C3)
|
Intel Corporation
|
| TBOX313-835-FL-16 |
High performance DDR-1333 4 GB memory onboard
|
Axiomtek Co., Ltd.
|
| EV20073DH-00A |
2A, 1.30V ?6.0V DDR Memory VTT Termination Regulator
|
Monolithic Power System...
|
| CM3131-11SH CM3131 CM3131-01SB CM3131-01SH CM3131- |
Triple Linear Voltage Regulator for DDR-I/-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| JS28F008 |
(JS28Fxxx) Advanced Boot Block Flash Memory
|
Intel
|
| TPS51116 |
Complete DDR & DDR2 Memory Power
From old datasheet system
|
ti
|
