| PART |
Description |
Maker |
| BS616UV4016 |
From old datasheet system
Asynchronous 4M(256Kx16) bits Static RAM
|
Brilliance Semiconductor
BSI
|
| BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, Inc.
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS62UV2006 BS62UV2006TIP85 BS62UV2006DC BS62UV2006 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit 超低功率/电压CMOS SRAM56K × 8
1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| IS42S16400C1-6T IS42S16400C1-6TL IS42S16400C1-6TLI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
