PART |
Description |
Maker |
CJD32C CJD31C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch COMPLEMENTARY SILICON POWER TRANSISTOR From old datasheet system
|
CENTRAL[Central Semiconductor Corp]
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
2SA1837 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SA1804 E000563 |
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) From old datasheet system TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 晶体管(功率放大器应用)
|
TOSHIBA[Toshiba Semiconductor] AVX, Corp.
|
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管(STOROBO闪光,中等功率放大器应用 TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
2SA1681 E000546 |
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS From old datasheet system TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
KSD2012 KSD2012GTU |
LOW FREQUENCY POWER AMPLIFIER 3 A, 60 V, NPN, Si, POWER TRANSISTOR NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SB1015 2SB1015A EA09109 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
KTB1772 |
General Purpose Transistor EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|