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MGP4N60EDD - IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS Insulated Gate Bipolar Transistor with Anti-Parallel Diode From old datasheet system

MGP4N60EDD_278488.PDF Datasheet

 
Part No. MGP4N60ED_D MGP4N60ED ON1873 ON1872
Description IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system

File Size 142.07K  /  6 Page  

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Part: MGP4N60ED
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 Full text search : IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS Insulated Gate Bipolar Transistor with Anti-Parallel Diode From old datasheet system
 Product Description search : IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS Insulated Gate Bipolar Transistor with Anti-Parallel Diode From old datasheet system


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