| PART |
Description |
Maker |
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC5176 E001060 |
From old datasheet system
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS)
HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| SG1825 SG1825C SG1825CJ SG1825CJ_883B SG1825CJ_DES |
2 A SWITCHING CONTROLLER, 1500 kHz SWITCHING FREQ-MAX, PDSO16
HIGH - SPEED CURRENT - MODE PWM 2 A SWITCHING CONTROLLER, 1500 kHz SWITCHING FREQ-MAX, CDIP16
HIGH - SPEED CURRENT - MODE PWM 2 A SWITCHING CONTROLLER, 1500 kHz SWITCHING FREQ-MAX, CQCC20
Current Mode PWMs
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MMBT3904 SMBT3904 SMBT3904/MMBT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
| 2SK1119 SK1119 E001314 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| CMPD415010 |
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING
|
New Jersey Semi-Conductor Products, Inc.
|
